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KRC851E Datasheet, PDF (1/6 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)
SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
ᴌWith Built-in Bias Resistors.
ᴌSimplify Circuit Design.
ᴌReduce a Quantity of Parts and Manufacturing Process.
ᴌHigh Packing Density.
EQUIVALENT CIRCUIT
OUT
R1
IN
R2
COMMON
BIAS RESISTOR VALUES
TYPE NO. R1(ká½µ) R2(ká½µ)
KRC851E
4.7
4.7
KRC852E
10
10
KRC853E
22
22
KRC854E
47
47
KRC855E
2.2
47
KRC856E
4.7
47
KRC851E~KRC856E
EPITAXIAL PLANAR NPN TRANSISTOR
B
B1
1
6
DIM MILLIMETERS
A
1.6+_ 0.05
2
5
A1
1.0 +_ 0.05
B
1.6+_ 0.05
B1
1.2 +_ 0.05
3
4
C
0.50
D
0.2+_ 0.05
H
0.5+_ 0.05
P
J
0.12+_ 0.05
P
P
5
1. Q1 COMMON (EMITTER)
2. Q1 IN (BASE)
3. Q2 OUT (COLLECTOR)
4. Q2 COMMON (EMITTER)
5. Q2 IN (BASE)
6. Q1 OUT (COLLECTOR)
TES6
EQUIVALENT CIRCUIT (TOP VIEW)
6
5
4
Q1
Q2
MAXIMUM RATING (Ta=25á´±)
CHARACTERISTIC
Output Voltage
Input Voltage
Output Current
Power Dissipation
Junction Temperature
Storage Temperature Range
* Total Rating.
KRC851Eᴕ856E
KRC851E
KRC852E
KRC853E
KRC854E
KRC855E
KRC856E
KRC851Eᴕ856E
SYMBOL
VO
VI
IO
PD*
Tj
Tstg
MARK SPEC
TYPE KRC851E KRC852E KRC853E KRC854E KRC855E KRC856E
MARK
NA
NB
NC
ND
NE
NF
1
2
3
RATING
50
20, -10
30, -10
40, -10
40, -10
12, -5
20, -5
100
200
150
-55ᴕ150
UNIT
V
V
mA
mW
á´±
á´±
Marking
Type Name
654
1 23
2002. 1. 24
Revision No : 1
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