KRC836E Datasheet, PDF (1/6 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)

SEMICONDUCTOR
TECHNICAL DATA
KRC836E~KRC842E
EPITAXIAL PLANAR NPN TRANSISTOR
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION
FEATURES
With Built-in Bias Resistors.
Simplify Circuit Design.
Reduce a Quantity of Parts and Manufacturing Process.
EQUIVALENT CIRCUIT
OUT
R1
IN
R2
COMMON
TYPE NO.
KRC836E
KRC837E
KRC838E
KRC839E
KRC840E
KRC841E
KRC842E
R1(k )
1
2.2
2.2
4.7
10
47
100
R2(k )
10
2.2
10
10
4.7
10
100
B
B1
1
6
DIM MILLIMETERS
A
1.6+_ 0.05
A1
1.0 +_ 0.05
2
5
B
1.6+_ 0.05
B1
1.2 +_ 0.05
3
4
C
0.50
D
0.2+_ 0.05
H
0.5+_ 0.05
J
0.12+_ 0.05
P
P
P
5
1. Q₁ COMMON (EMITTER)
2. Q₂ COMMON (EMITTER)
3. Q₂ IN (BASE)
4. Q₂ OUT (COLLECTOR)
5. Q₁ IN (BASE)
6. Q₁ OUT (COLLECTOR)
TES6
EQUIVALENT CIRCUIT (TOP VIEW)
6
5
4
Q1
Q2
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Output Voltage
Input Voltage
Output Current
Power Dissipation
Junction Temperature
Storage Temperature Range
* Total Rating.
KRC836E~842E
KRC836E
KRC837E
KRC838E
KRC839E
KRC840E
KRC841E
KRC842E
KRC836E~842E
SYMBOL
V_O
V_I
I_O
P_D *
T_j
T_stg
MARK SPEC
TYPE KRC836E KRC837E KRC838E KRC839E KRC840E KRC841E KRC842E
MARK
Y2
Y4
Y5
Y6
Y7
Y8
Y9
2002. 7. 10
Revision No : 2
1
2
3
RATING
50
10, -5
12, -10
12,-5
20, -7
30, -10
40, -15
40, -10
100
200
150
UNIT
V
V
mA
mW
-55 150
Marking
Type Name
654
1 23
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