KRC827E Datasheet, PDF (1/4 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)

SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
ᴌWith Built-in Bias Resistors.
ᴌSimplify Circuit Design.
ᴌReduce a Quantity of Parts and Manufacturing Process.
ᴌHigh Packing Density.
EQUIVALENT CIRCUIT
OUT
R1
IN
R2
COMMON
BIAS RESISTOR VALUES
TYPE NO. R1(ká½µ) R2(ká½µ)
KRC827E
10
47
KRC828E
22
47
KRC829E
47
22
KRC827E~KRC829E
EPITAXIAL PLANAR NPN TRANSISTOR
B
B1
1
6
DIM MILLIMETERS
A
1.6+_ 0.05
2
5
A1
1.0 +_ 0.05
B
1.6+_ 0.05
B1
1.2 +_ 0.05
3
4
C
0.50
D
0.2+_ 0.05
H
0.5+_ 0.05
P
J
0.12+_ 0.05
P
P
5
1. Q₁ COMMON (EMITTER)
2. Q₂ COMMON (EMITTER)
3. Q₂ IN (BASE)
4. Q₂ OUT (COLLECTOR)
5. Q₁ IN (BASE)
6. Q₁ OUT (COLLECTOR)
TES6
EQUIVALENT CIRCUIT (TOP VIEW)
6
5
4
Q1
Q2
MAXIMUM RATING (Ta=25á´±)
CHARACTERISTIC
Output Voltage
KRC827Eᴕ829E
KRC827E
Input Voltage
KRC828E
KRC829E
Output Current
Power Dissipation
Junction Temperature
KRC827Eᴕ829E
Storage Temperature Range
* Total Rating.
MARK SPEC
TYPE
MARK
KRC827E
YH
KRC828E
YI
KRC829E
YJ
1
2
3
SYMBOL
V_O
V_I
I_O
P_D *
T_j
T_stg
RATING
50
30, -6
40, -7
40,-15
100
200
150
-55ᴕ150
Marking
Type Name
654
1 23
2002. 1. 24
Revision No : 1
UNIT
V
V
mA
mW
á´±
á´±
1/4