KRC651E Datasheet, PDF (1/6 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)

SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
ᴌWith Built-in Bias Resistors.
ᴌSimplify Circuit Design.
ᴌReduce a Quantity of Parts and Manufacturing Process.
ᴌHigh Packing Density.
EQUIVALENT CIRCUIT
OUT
R1
IN
R2
COMMON
BIAS RESISTOR VALUES
TYPE NO. R1(ká½µ) R2(ká½µ)
KRC651E
4.7
4.7
KRC652E
10
10
KRC653E
22
22
KRC654E
47
47
KRC655E
2.2
47
KRC656E
4.7
47
KRC651E~KRC656E
EPITAXIAL PLANAR NPN TRANSISTOR
B
B1
1
5
DIM MILLIMETERS
A
1.6 +_ 0.05
A1
1.0+_ 0.05
2
B
1.6+_ 0.05
B1
1.2+_ 0.05
3
4
C
0.50
D
0.2+_ 0.05
H
0.5+_ 0.05
P
P
J
0.12+_ 0.05
P
5
1. Q₁ IN (BASE)
2. Q₁, Q ₂ COMMON (EMITTER)
3. Q₂ IN (BASE)
4. Q₂ OUT (COLLECTOR)
5. Q₁ OUT (COLLECTOR)
TESV
EQUIVALENT CIRCUIT (TOP VIEW)
5
4
Q1
Q2
MAXIMUM RATING (Ta=25á´±)
CHARACTERISTIC
Output Voltage
Input Voltage
Output Current
Power Dissipation
Junction Temperature
Storage Temperature Range
* Total Rating.
KRC651Eᴕ656E
KRC651E
KRC652E
KRC653E
KRC654E
KRC655E
KRC656E
KRC651Eᴕ656E
SYMBOL
V_O
V_I
I_O
P_D*
T_j
T_stg
MARK SPEC
TYPE KRC651E KRC652E KRC653E KRC654E KRC655E KRC656E
MARK
NA
NB
NC
ND
NE
NF
1
2
3
RATING
50
20, -10
30, -10
40, -10
40, -10
12, -5
20, -5
100
200
150
-55ᴕ150
UNIT
V
V
mA
mW
á´±
á´±
Marking
5
Type Name
4
1 23
2002. 1. 24
Revision No : 1
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