KRC410V Datasheet, PDF (1/4 Pages) KEC(Korea Electronics) – SEMICONDUCTOR

SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
With Built-in Bias Resistors.
Simplify Circuit Design.
Reduce a Quantity of Parts and Manufacturing Process.
High Packing Density.
EQUIVALENT CIRCUIT
C
R1
B
E
KRC410V~KRC414V
EPITAXIAL PLANAR NPN TRANSISTOR
E
B
2
DIM MILLIMETERS
A
1.2 +_0.05
B
0.8 +_0.05
1
3
C
0.5 +_ 0.05
D
0.3 +_ 0.05
E
1.2 +_ 0.05
G
0.8 +_ 0.05
P
P
H
0.40
J
0.12+_ 0.05
K
0.2 +_ 0.05
P
5
1. COMMON (EMITTER)
2. IN (BASE)
3. OUT (COLLECTOR)
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V_CBO
50
V_CEO
50
V_EBO
5
Collector Current
I_C
100
UNIT
V
V
V
mA
VSM
CHARACTERISTIC
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL RATING
P_C
100
T_j
150
T_stg
-55 150
UNIT
mW
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
KRC410V
KRC411V
Input Resistor
KRC412V
KRC413V
KRC414V
Note : * Characteristic of Transistor Only.
I_CBO
I_EBO
h_FE
V_CE(sat)
f_T *
R₁
TEST CONDITION
V_CB=50V, I_E=0
V_EB=5V, I_C=0
V_CE=5V, I_C=1mA
I_C=10mA, I_B=0.5mA
V_CE=10V, I_C=5mA
MARK SPEC
TYPE
KRC410V
MARK
NK
KRC411V
NM
KRC412V
NN
KRC413V
NO
KRC414V
NP
MIN.
-
-
120
-
-
3.29
7
70
15.4
32.9
TYP.
-
-
-
0.1
250
4.7
10
100
22
47
MAX.
100
100
-
0.3
-
6.11
13
130
28.6
61.1
UNIT
nA
nA
V
MHz
k
Marking
Type Name
2008. 11. 20
Revision No : 2
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