KRC410E Datasheet, PDF (1/4 Pages) KEC(Korea Electronics) – SEMICONDUCTOR

SEMICONDUCTOR
TECHNICAL DATA
KRC410E~KRC414E
EPITAXIAL PLANAR NPN TRANSISTOR
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
hWith Built-in Bias Resistors.
hSimplify Circuit Design.
hReduce a Quantity of Parts and Manufacturing Process.
hHigh Packing Density.
EQUIVALENT CIRCUIT
C
R1
B
E
E
B
D
2
1
3
J
F
F
1. COMMON (EMITTER)
2. IN (BASE)
3. OUT (COLLECTOR)
DIM
A
B
C
D
E
F
G
H
J
MILLIMETERS
1.60+_ 0.20
0.85+_ 0.10
0.70+_ 0.10
0.27+_ 0.10
1.60+_ 0.10
0.39+_ 0.10
1.00+_ 0.10
0.50
0.13+_ 0.05
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
V_CBO
50
Collector-Emitter Voltage
V_CEO
50
Emitter-Base Voltage
V_EBO
5
Collector Current
I_C
100
UNIT
V
V
V
mA
ESM
CHARACTERISTIC
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL RATING
P_C
100
T_j
150
T_stg
-55q150
UNIT
mW


ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
I_CBO
Emitter Cut-off Current
I_EBO
DC Current Gain
h_FE
Collector-Emitter Saturation Voltage
V_CE(sat)
Transition Frequency
Input Resistor
f_T *
KRC410E
KRC411E
KRC412E
R₁
KRC413E
KRC414E
TEST CONDITION
V_CB=50V, I_E=0
V_EB=5V, I_C=0
V_CE=5V, I_C=1mA
I_C=10mA, I_B=0.5mA
V_CE=10V, I_C=5mA
MARK SPEC
TYPE
KRC410E
MARK
NK
KRC411E
NM
KRC412E
NN
KRC413E
NO
KRC414E
NP
MIN.
-
-
120
-
-
3.29
7
70
15.4
32.9
TYP.
-
-
-
0.1
250
4.7
10
100
22
47
MAX.
100
100
-
0.3
-
6.11
13
130
28.6
61.1
UNIT
nA
nA
V
MHz
kʃ
Marking
Type Name
2014. 3. 31
Revision No : 3
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