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KRC401V Datasheet, PDF (1/6 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR | |||
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SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
á´With Built-in Bias Resistors.
á´Simplify Circuit Design.
á´Reduce a Quantity of Parts and Manufacturing Process.
á´High Packing Density.
EQUIVALENT CIRCUIT
OUT
R1
IN
R2
COMMON
BIAS RESISTOR VALUES
TYPE NO. R1(ká½µ) R2(ká½µ)
KRC401V
4.7
4.7
KRC402V
10
10
KRC403V
22
22
KRC404V
47
47
KRC405V
2.2
47
KRC406V
4.7
47
KRC401V~KRC406V
EPITAXIAL PLANAR NPN TRANSISTOR
E
B
2
DIM MILLIMETERS
A
1.2 +_0.05
B
0.8 +_0.05
1
3
C
0.5 +_ 0.05
D
0.3 +_ 0.05
E
1.2 +_ 0.05
G
0.8 +_ 0.05
P
P
H
0.40
J
0.12+_ 0.05
K
0.2 +_ 0.05
P
5
1. COMMON (EMITTER)
2. IN (BASE)
3. OUT (COLLECTOR)
VSM
MAXIMUM RATING (Ta=25á´±)
CHARACTERISTIC
Output Voltage
KRC401Vá´406V
KRC401V
KRC402V
Input Voltage
KRC403V
KRC404V
KRC405V
KRC406V
Output Current
Power Dissipation
Junction Temperature
KRC401Vá´406V
Storage Temperature Range
SYMBOL
VO
VI
IO
PD
Tj
Tstg
MARK SPEC
TYPE KRC401V KRC402V KRC403V KRC404V KRC405V KRC406V
MARK
NA
NB
NC
ND
NE
NF
RATING
50
20, -10
30, -10
40, -10
40, -10
12, -5
20, -5
100
100
150
-55á´150
UNIT
V
V
mA
mW
á´±
á´±
Marking
Type Name
2001. 7. 24
Revision No : 0
1/6
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