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KRC401E Datasheet, PDF (1/6 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR | |||
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SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
á´With Built-in Bias Resistors.
á´Simplify Circuit Design.
á´Reduce a Quantity of Parts and Manufacturing Process.
á´High Packing Density.
EQUIVALENT CIRCUIT
OUT
R1
IN
R2
COMMON
BIAS RESISTOR VALUES
TYPE NO. R1(ká½µ) R2(ká½µ)
KRC401E
4.7
4.7
KRC402E
10
10
KRC403E
22
22
KRC404E
47
47
KRC405E
2.2
47
KRC406E
4.7
47
KRC401E~KRC406E
EPITAXIAL PLANAR NPN TRANSISTOR
E
B
DIM MILLIMETERS
2
D
A
1.60+_ 0.10
B
0.85+_ 0.10
1
3
C
0.70+_ 0.10
D 0.27+0.10/-0.05
E
1.60+_ 0.10
G
1.00+_ 0.10
H
0.50
J
0.13+_ 0.05
J
1. COMMON (EMITTER)
2. IN (BASE)
3. OUT (COLLECTOR)
ESM
MAXIMUM RATING (Ta=25á´±)
CHARACTERISTIC
Output Voltage
KRC401Eá´406E
KRC401E
KRC402E
Input Voltage
KRC403E
KRC404E
KRC405E
KRC406E
Output Current
Power Dissipation
Junction Temperature
KRC401Eá´406E
Storage Temperature Range
SYMBOL
VO
VI
IO
PD
Tj
Tstg
MARK SPEC
TYPE KRC401E KRC402E KRC403E KRC404E KRC405E KRC406E
MARK
NA
NB
NC
ND
NE
NF
RATING
50
20, -10
30, -10
40, -10
40, -10
12, -5
20, -5
100
100
150
-55á´150
UNIT
V
V
mA
mW
á´±
á´±
Marking
Type Name
1999. 6. 8
Revision No : 0
1/6
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