KRA760E Datasheet, PDF (1/4 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)

SEMICONDUCTOR
TECHNICAL DATA
KRA760E~KRA764E
EPITAXIAL PLANAR PNP TRANSISTOR
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
With Built-in Bias Resistors.
Simplify Circuit Design.
Reduce a Quantity of Parts and Manufacturing Process.
High Packing Density.
EQUIVALENT CIRCUIT
C
R1
B
EQUIVALENT CIRCUIT (TOP VIEW)
6
5
4
Q1
Q2
E
1
2
3
B
B1
1
6
DIM MILLIMETERS
A
1.6+_ 0.05
A1
1.0 +_ 0.05
2
5
B
1.6+_ 0.05
B1
1.2 +_ 0.05
3
4
C
0.50
D
0.2+_ 0.05
H
0.5+_ 0.05
J
0.12+_ 0.05
P
P
P
5
1. Q₁ EMITTER
2. Q₁ BASE
3. Q₂ COLLECTOR
4. Q₂ EMITTER
5. Q₂ BASE
6. Q₁ COLLECTOR
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V_CBO
V_CEO
V_EBO
Collector Current
I_C
RATING
-50
-50
-5
-100
UNIT
V
V
V
mA
CHARACTERISTIC
Collector Power Dissipation
Junction Temperature
Storage TemperatureRange
* Total Rating.
TES6
SYMBOL
P_C *
T_j
T_stg
RATING
200
150
-55 150
UNIT
mW
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
KRA760E
KRA761E
Input Resistor
KRA762E
KRA763E
KRA764E
Note : * Characteristic of Transistor Only.
MARK SPEC
I_CBO
I_EBO
h_FE
V_CE(sat)
f_T *
R₁
V_CB=-50V, I_E=0
-
V_EB=-5V, I_C=0
-
V_CE=-5V, I_C=-1mA
120
I_C=-10mA, I_B=-0.5mA
-
V_CE=-10V, I_C=-5mA
-
-
-
-
-
-
Marking
65
TYPE
KRA760E KRA761E KRA762E KRA763E KRA764E
MARK
PK
PM
PN
PO
PP
TYP.
-
-
-
-0.1
250
4.7
10
100
22
47
MAX.
-100
-100
-
-0.3
-
-
-
-
-
-
Type Name
4
UNIT
nA
nA
V
MHz
k
1 23
2002. 7. 9
Revision No : 2
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