KRA757E Datasheet, PDF (1/4 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)

SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
ᴌWith Built-in Bias Resistors
ᴌSimplify Circuit Design
ᴌReduce a Quantity of Parts and Manufacturing Process
ᴌHigh Packing Density.
EQUIVALENT CIRCUIT
OUT
R1
IN
R2
COMMON(+)
BIAS RESISTOR VALUES
TYPE NO. R1(ká½µ) R2(ká½µ)
KRA757E
10
47
KRA758E
22
47
KRA759E
47
22
KRA757E~KRA759E
EPITAXIAL PLANAR PNP TRANSISTOR
B
B1
1
6
DIM MILLIMETERS
A
1.6+_ 0.05
2
5
A1
1.0 +_ 0.05
B
1.6+_ 0.05
B1
1.2 +_ 0.05
3
4
C
0.50
D
0.2+_ 0.05
H
0.5+_ 0.05
P
J
0.12+_ 0.05
P
P
5
1. Q₁ COMMON (EMITTER)
2. Q₁ IN (BASE)
3. Q₂ OUT (COLLECTOR)
4. Q₂ COMMON (EMITTER)
5. Q₂ IN (BASE)
6. Q₁ OUT (COLLECTOR)
TES6
EQUIVALENT CIRCUIT (TOP VIEW)
6
5
4
Q1
Q2
MAXIMUM RATING (Ta=25á´±)
CHARACTERISTIC
Output Voltage
Input Voltage
Output Current
Power Dissipation
Junction Temperature
Storage Temperature Range
* Total Rating.
KRA757Eᴕ759E
KRA757E
KRA758E
KRA759E
KRA757Eᴕ759E
MARK SPEC
TYPE
MARK
KRA757E
PH
KRA758E
PI
KRA759E
PJ
1
2
3
SYMBOL
V_O
V_I
I_O
P_D *
T_j
T_stg
RATING
-50
-30, 6
-40, 7
-40, 15
-100
200
150
-55ᴕ150
Marking
Type Name
654
1 23
UNIT
V
V
mA
mW
á´±
á´±
2002. 1. 24
Revision No : 1
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