KRA730U Datasheet, PDF (1/4 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)

SEMICONDUCTOR
TECHNICAL DATA
KRA730U~KRA734U
EPITAXIAL PLANAR PNP TRANSISTOR
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
With Built-in Bias Resistors.
Simplify Circuit Design.
Reduce a Quantity of Parts and Manufacturing Process.
High Packing Density.
EQUIVALENT CIRCUIT
C
EQUIVALENT CIRCUIT (TOP VIEW)
6
5
4
B
B1
1
6
DIM MILLIMETERS
A
2.00+_ 0.20
2
5
A1
1.3+_ 0.1
B
2.1+_ 0.1
3
4 D _B1
1.25+_ 0.1
C
0.65
D
0.2+0.10/-0.05
G
0-0.1
H
0.9+_ 0.1
T
T
0.15+0.1/-0.05
G
R1
B
E
Q1
Q2
1
2
3
1. Q₁ EMITTER
2. Q₂ EMITTER
3. Q₂ BASE
4. Q₂ COLLECTOR
5. Q₁ BASE
6. Q₁ COLLECTOR
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V_CBO
V_CEO
V_EBO
Collector Current
I_C
RATING
-50
-50
-5
-100
UNIT
CHARACTERISTIC
V
Collector Power Dissipation
V
Junction Temperature
V
Storage TemperatureRange
mA ^{* Total Rating.}
US6
SYMBOL
P_C *
T_j
T_stg
RATING
200
150
-55 150
UNIT
mW
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
KRA730U
KRA731U
Input Resistor
KRA732U
KRA733U
KRA734U
Note : * Characteristic of transistor only.
I_CBO
I_EBO
h_FE
V_CE(sat)
f_T *
R₁
TEST CONDITION
V_CB=-50V, I_E=0
V_EB=-5V, I_C=0
V_CE=-5V, I_C=-1mA
I_C=-10mA, I_B=-0.5mA
V_CE=-10V, I_C=-5mA
MARK SPEC
TYPE
KRA730U
MARK
JK
KRA731U
JM
KRA732U
JN
KRA733U
JO
KRA734U
JP
MIN.
-
-
120
-
-
-
-
-
-
-
TYP.
-
-
-
-0.1
250
4.7
10
100
22
47
MAX.
-100
-100
-
-0.3
-
-
-
-
-
-
Marking
Type Name
654
UNIT
nA
nA
V
MHz
k
1 23
2002. 7. 9
Revision No : 2
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