KRA557E Datasheet, PDF (1/4 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)

SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
ᴌWith Built-in Bias Resistors
ᴌSimplify Circuit Design
ᴌReduce a Quantity of Parts and Manufacturing Process
ᴌHigh Packing Density.
EQUIVALENT CIRCUIT
OUT
R1
IN
R2
COMMON(+)
BIAS RESISTOR VALUES
TYPE NO. R1(ká½µ) R2(ká½µ)
KRA557E
10
47
KRA558E
22
47
KRA559E
47
22
KRA557E~KRA559E
EPITAXIAL PLANAR PNP TRANSISTOR
B
B1
1
5
DIM MILLIMETERS
A
1.6 +_ 0.05
A1
1.0+_ 0.05
2
B
1.6+_ 0.05
B1
1.2+_ 0.05
3
4
C
0.50
D
0.2+_ 0.05
H
0.5+_ 0.05
P
P
J
0.12+_ 0.05
P
5
1. Q₁ IN (BASE)
2. Q₁, Q ₂ COMMON (EMITTER)
3. Q₂ IN (BASE)
4. Q₂ OUT (COLLECTOR)
5. Q₁ OUT (COLLECTOR)
TESV
EQUIVALENT CIRCUIT (TOP VIEW)
5
4
Q1
Q2
MAXIMUM RATING (Ta=25á´±)
CHARACTERISTIC
Output Voltage
Input Voltage
Output Current
Power Dissipation
Junction Temperature
Storage Temperature Range
* Total Rating.
KRA557Eᴕ559E
KRA557E
KRA558E
KRA559E
KRA557Eᴕ559E
MARK SPEC
TYPE
MARK
KRA557E
PH
KRA558E
PI
KRA559E
PJ
SYMBOL
V_O
V_I
I_O
P_D *
T_j
T_stg
Marking
5
1
2
3
RATING
-50
-30, 6
-40, 7
-40, 15
-100
200
150
-55ᴕ150
Type Name
4
2002. 1. 24
Revision No : 1
1 23
UNIT
V
V
mA
mW
á´±
á´±
1/4