KRA307E Datasheet, PDF (1/4 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
With Built-in Bias Resistors
Simplify Circuit Design
Reduce a Quantity of Parts and Manufacturing Process
High Packing Density.
EQUIVALENT CIRCUIT
OUT
R1
IN
R2
BIAS RESISTOR VALUES
TYPE NO. R1(k ) R2(k )
KRA307E
10
47
KRA308E
22
47
KRA309E
47
22
KRA307E~KRA309E
EPITAXIAL PLANAR PNP TRANSISTOR
E
B
DIM MILLIMETERS
A
1.60+_ 0.10
2
D
B
0.85+_ 0.10
1
3
C
0.70+_ 0.10
D 0.27+0.10/-0.05
E
1.60+_ 0.10
G
1.00+_ 0.10
H
0.50
J
0.13+_ 0.05
J
1. COMMON (EMITTER)
2. IN (BASE)
3. OUT (COLLECTOR)
COMMON(+)
ESM
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Output Voltage
KRA307E 309E
KRA307E
Input Voltage
KRA308E
KRA309E
Output Current
Power Dissipation
Junction Temperature
KRA307E 309E
Storage Temperature Range
SYMBOL
V_O
V_I
I_O
P_D
T_j
T_stg
RATING
-50
-30, 6
-40, 7
-40, 15
-100
100
150
-55 150
UNIT
V
V
mA
mW
MARK SPEC
TYPE
MARK
KRA307E
PH
KRA308E
PI
KRA309E
PJ
Marking
Type Name
2003. 12. 23
Revision No : 1
1/4