KRA306E Datasheet, PDF (1/6 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
ᴌWith Built-in Bias Resistors.
ᴌSimplify Circuit Design.
ᴌReduce a Quantity of Parts and Manufacturing Process.
ᴌHigh Packing Density.
EQUIVALENT CIRCUIT
OUT
R1
IN
R2
COMMON(+)
BIAS RESISTOR VALUES
TYPE NO. R1(ká½µ) R2(ká½µ)
KRA301E
4.7
4.7
KRA302E
10
10
KRA303E
22
22
KRA304E
47
47
KRA305E
2.2
47
KRA306E
4.7
47
KRA301E~KRA306E
EPITAXIAL PLANAR PNP TRANSISTOR
E
B
DIM MILLIMETERS
2
D
A
1.60+_ 0.10
B
0.85+_ 0.10
1
3
C
0.70+_ 0.10
D 0.27+0.10/-0.05
E
1.60+_ 0.10
G
1.00+_ 0.10
H
0.50
J
0.13+_ 0.05
J
1. COMMON (EMITTER)
2. IN (BASE)
3. OUT (COLLECTOR)
ESM
MAXIMUM RATING (Ta=25á´±)
CHARACTERISTIC
Output Voltage
KRA301Eᴕ306E
KRA301E
KRA302E
Input Voltage
KRA303E
KRA304E
KRA305E
KRA306E
Output Current
Power Dissipation
Junction Temperature
KRA301Eᴕ306E
Storage Temperature Range
SYMBOL
V_O
V_I
I_O
P_D
T_j
T_stg
RATING
-50
-20, 10
-30, 10
-40, 10
-40, 10
-12, 5
-20, 5
-100
100
150
-55ᴕ150
UNIT
V
V
mA
mW
á´±
á´±
MARK SPEC
TYPE KRA301E
MARK
PA
KRA302E
PB
KRA303E
PC
KRA304E
PD
KRA305E
PE
KRA306E
PF
Marking
Type Name
1999. 6. 8
Revision No : 0
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