KRA116S_02 Datasheet, PDF (1/6 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION
FEATURES
With Built-in Bias Resistors.
Simplify Circuit Design.
Reduce a Quantity of Parts and Manufacturing Process.
EQUIVALENT CIRCUIT
OUT
R1
IN
R2
COMMON(+)
BIAS RESISTOR VALUES
TYPE NO. R1(k ) R2(k )
KRA116S
1
10
KRA117S
2.2
2.2
KRA118S
2.2
10
KRA119S
4.7
10
KRA120S
10
4.7
KRA121S
47
10
KRA122S
100
100
KRA116S~KRA122S
EPITAXIAL PLANAR PNP TRANSISTOR
E
L BL
2
3
1
P
P
M
1. EMITTER
2. BASE
3. COLLECTOR
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
2.93+_ 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
SOT-23
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Output Voltage
KRA116S 122S
KRA116S
KRA117S
KRA118S
Input Voltage
KRA119S
KRA120S
KRA121S
KRA122S
Output Current
Power Dissipation
Junction Temperature
KRA116S 122S
Storage Temperature Range
SYMBOL
V_O
V_I
I_O
P_D
T_j
T_stg
RATING
-50
-10, 5
-12, 10
-12, 5
-20, 7
-30, 10
-40, 15
-40, 10
-100
200
150
-55 150
MAXIMUM RATING (Ta=25 )
TYPE KRA116S KRA117S KRA118S KRA119S KRA120S KRA121S KRA122S
MARK
P2
P4
P5
P6
P7
P8
P9
Marking
Type Name
UNIT
V
V
mA
mW
Lot No.
2002. 7. 9
Revision No : 3
1/6