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KRA116M_02 Datasheet, PDF (1/7 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR
SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION
FEATURES
With Built-in Bias Resistors.
Simplify Circuit Design.
Reduce a Quantity of Parts and Manufacturing Process.
EQUIVALENT CIRCUIT
OUT
R1
IN
R2
COMMON(+)
BIAS RESISTOR VALUES
TYPE NO. R1(k ) R2(k )
KRA116M
1
10
KRA117M
2.2
2.2
KRA118M
2.2
10
KRA119M
4.7
10
KRA120M
10
4.7
KRA121M
47
10
KRA122M
100
100
KRA116M~KRA122M
EPITAXIAL PLANAR PNP TRANSISTOR
B
H
M
C
EE
1 2 3N
L
O DIM MILLIMETERS
A
3.20 MAX
B
4.30 MAX
C
0.55 MAX
D
2.40+_ 0.15
E
1.27
F
2.30
G 14.00+_ 0.50
H
0.60 MAX
J
1.05
K
1.45
L
25
M
0.80
N
0.55 MAX
O
0.75
1. COMMON (EMITTER)
2. OUT (COLLECTOR)
3. IN (BASE)
TO-92M
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Output Voltage
KRA116M 122M
KRA116M
KRA117M
KRA118M
Input Voltage
KRA119M
KRA120M
KRA121M
KRA122M
Output Current
Power Dissipation
Junction Temperature
KRA116M 122M
Storage Temperature Range
SYMBOL
VO
VI
IO
PD
Tj
Tstg
RATING
-50
-10, 5
-12, 10
-12, 5
-20, 7
-30, 10
-40, 15
-40, 10
-100
400
150
-55 150
UNIT
V
V
mA
mW
2002. 7. 2
Revision No : 3
1/7