KP8N60D Datasheet, PDF (1/6 Pages) KEC(Korea Electronics) – N CHANNEL MOS FIELD EFFECT TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
General Description
This Super Junction MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for active power factor
correction and switching mode power supplies.
FEATURES
hV_DSS=600V, I_D=8A
hDrain-Source ON Resistance :
R_DS(ON)(Max)=0.58ʃ @V_GS=10V
hQg(typ.)= 16nC
MAXIMUM RATING (Tc=25)
CHARACTERISTIC
SYMBOL
RATING
Drain-Source Voltage
Gate-Source Voltage
@T_C=25
Drain Current @T_C=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25
Derate above 25
V_DSS
V_GSS
I_D
I_DP
E_AS
E_AR
dv/dt
P_D
600
‚30
8
5
18*
125
3.7
4.5
73.5
0.59
Maximum Junction Temperature
T_j
Storage Temperature Range
T_stg
Thermal Characteristics
150
-55q150
Thermal Resistance, Junction-to-Case R_thJC
1.7
Thermal Resistance,
Junction-to-Ambient
R_thJA
110
* : Drain current limited by maximum junction temperature.
UNIT
V
V
A
mJ
mJ
V/ns
W
W/


/W
/W
PIN CONNECTION
D
KP8N60D/I
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
KP8N60D
A
C
D
B
H
J
E
G
FF
K
L
N
M
DIM MILLIMETERS
A 6.60 +_ 0.20
B 6.10 +_0.20
C 5.34 +_ 0.30
D 0.70 +_0.20
E 2.70 +_ 0.15
F 2.30 +_ 0.10
G 0.96 MAX
H 0.90 MAX
J 1.80 +_0.20
K 2.30 +_0.10
L 0.50 +_ 0.10
M 0.50 +_0.10
N 0.70 MIN
O 0.1 MAX
1
2
3
O
1. GATE
2. DRAIN
3. SOURCE
DPAK (1)
KP8N60I
A
H
C
J
M
N
G
FF
123
P
L
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A
6.6 +_ 0.2
B
6.1 +_ 0.2
C
5.34 +_0.3
D
0.7 +_ 0.2
E
9.3 +_0.3
F
2.3+_ 0.2
G
0.76 +_ 0.1
H
2.3 +_ 0.1
J
0.5+_ 0.1
K
1.8 +_ 0.2
L
0.5 +_ 0.1
M
1.0 +_ 0.1
N 0.96 MAX
P
1.02 +_ 0.3
IPAK(1)
G
S
2013. 9. 23
Revision No : 0
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