KN3906S Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, SWITCHING)

SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
hLow Leakage Current
: I_CEX=-50nA(Max.) ; @V_CE=-30V, V_EB=-3V.
hLow Saturation Voltage
: V_CE(sat)=-0.4V(Max.) ; I_C=-50mA, I_B=-5mA.
hComplementary to the KN3904S.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C *
T_j
-40
-40
-5
-200
-50
350
150
Storage Temperature Range
T_stg
-55q150
Note : * Package Mounted On 99.5% Alumina 10ƒ8ƒ0.6ɘ)
UNIT
V
V
V
mA
mA
mW


KN3906S
EPITAXIAL PLANAR PNP TRANSISTOR
E
L BL
DIM MILLIMETERS
A
2.93+_ 0.20
B 1.30+0.20/-0.15
2
3
C
1.30 MAX
D 0.40+0.15/-0.05
E 2.40+0.30/-0.20
1
G
1.90
H
0.95
J 0.13+0.10/-0.05
K
0.00 ~ 0.10
Q
P
P
L
0.55
M
0.20 MIN
N 1.00+0.20/-0.10
P
7
Q
0.1 MAX
M
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
Marking
ZAA ^{Type Name}
Lot No.
1998. 6. 15
Revision No : 1
1/3