KN2907AS Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
hLow Leakage Current
: I_CEX=-50nA(Max.) ; V_CE=-30V, V_EB=-0.5V.
hLow Saturation Voltage
: V_CE(sat)=-0.4V(Max.) ; I_C=150mA, I_B=-15mA.
hComplementary to the KN2222S/2222AS.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
RATING
SYMBOL
UNIT
KN2907S KN2907AS
Collector-Base Voltage
V_CBO
-60
V
Collector-Emitter Voltage
V_CEO
-40
-60
V
Emitter-Base Voltage
V_EBO
-5
V
Collector Current
I_C
-600
mA
Collector Power Dissipation
P_C
(Ta=25)
P_C *
150
mW
350
Junction Temperature
T_j
150

Storage Temperature Range
T_stg
-55q150

Note : * Package Mounted On 99.5% Alumina 10ƒ8ƒ0.6ɘ)
KN2907S/AS
EPITAXIAL PLANAR PNP TRANSISTOR
E
L BL
DIM MILLIMETERS
A
2.93+_ 0.20
B 1.30+0.20/-0.15
2
3
C
1.30 MAX
D 0.40+0.15/-0.05
E 2.40+0.30/-0.20
1
G
1.90
H
0.95
J 0.13+0.10/-0.05
K
0.00 ~ 0.10
Q
P
P
L
0.55
M
0.20 MIN
N 1.00+0.20/-0.10
P
7
Q
0.1 MAX
M
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
Marking
Type Name
ZDA
Lot No.
ZHA ^{Type Name}
Lot No.
MARK SPEC
TYPE
KN2907S
KN2907AS
MARK
ZDA
ZHA
2002. 6. 25
Revision No : 3
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