KN2222 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING)

SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
Low Leakage Current
: I_CEX=10nA(Max.) ; V_CE=60V, V_EB(OFF)=3V.
Low Saturation Voltage
: V_CE(sat)=0.3V(Max.) ; I_C=150mA, I_B=15mA.
Complementary to the KN2907/2907A.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
RATING
SYMBOL
UNIT
KN2222 KN2222A
Collector-Base Voltage
V_CBO
60
75
V
Collector-Emitter Voltage
V_CEO
30
40
V
Emitter-Base Voltage
V_EBO
5
6
V
Collector Current
I_C
Collector Power Dissipation
P_C
(Ta=25 )
Junction Temperature
T_j
600
mA
625
mW
150
Storage Temperature Range
T_stg
-55 150
KN2222/A
EPITAXIAL PLANAR NPN TRANSISTOR
B
C
K
E
G
D
H
F
F
1 23
N DIM MILLIMETERS
A
4.70 MAX
B
4.80 MAX
C
3.70 MAX
D
0.45
E
1.00
F
1.27
G
0.85
H
0.45
J
14.00 +_0.50
K
0.55 MAX
L
2.30
M
0.45 MAX
N
1.00
1. EMITTER
2. BASE
3. COLLECTOR
TO-92
1996. 1. 28
Revision No : 0
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