 English |
|
|
|
|
|
|
|
| KML0D6NP20EA_15 Datasheet, PDF (1/6 Pages) KEC(Korea Electronics) – N and P-Ch Trench MOSFET | |||
| |||
|
SEMICONDUCTOR
TECHNICAL DATA
General Description
It s Mainly Suitable for Load Switching Cell Phones, Battery Powered
Systems and Level-Shifter.
FEATURES
hN-Channel
: VDSS=20V, ID=600mA (RDS(ON)=0.70Ê @ VGS=4.5V).
: VDSS=20V, ID=500mA (RDS(ON)=0.85Ê @ VGS=2.5V).
: VDSS=20V, ID=350mA (RDS(ON)=1.25Ê @ VGS=1.8V).
hP-Channel
: VDSS=-20V, ID=-400mA (RDS(ON)=1.2Ê @ VGS=-4.5V).
: VDSS=-20V, ID=-300mA (RDS(ON)=1.6Ê @ VGS=-2.5V).
: VDSS=-20V, ID=-150mA (RDS(ON)=2.7Ê @ VGS=-1.8V).
KML0D6NP20EA
N and P-Ch Trench MOSFET
MAXIMUM RATING (Ta=25Â)
CHARACTERISTIC
SYMBOL N-Ch P-Ch
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGSS
Drain Current
DC @TA=25Â
ID*
DC @TA=85Â
Pulsed
IDP
Source-Drain Diode Current
IS
Drain Power Dissipation
PD*
Maximum Junction Temperature
Tj
Storage Temperature Range
Tstg
Thermal Resistance, Junction to Ambient RthJA*
Note 1) *Surface Mounted on FR4 Board, tÂ5sec
20
-20
Â6
Â6
515 -390
370 -280
650 -650
450 -450
280
280
150
-55q150
446
UNIT
V
V
mA
mW
Â
Â
Â/W
2014. 3. 31
Revision No : 4
1/6
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese