KML0D6NP20EA Datasheet, PDF (1/6 Pages) KEC(Korea Electronics) – N and P-Ch Trench MOSFET

SEMICONDUCTOR
TECHNICAL DATA
General Description
It’s Mainly Suitable for Load Switching Cell Phones, Battery Powered
Systems and Level-Shifter.
KML0D6NP20EA
N and P-Ch Trench MOSFET
B
B1
FEATURES
N-Channel
: V_DSS=20V, I_D=600mA (R_DS(ON)=0.70
: V_DSS=20V, I_D=500mA (R_DS(ON)=0.85
: V_DSS=20V, I_D=350mA (R_DS(ON)=1.25
P-Channel
: V_DSS=-20V, I_D=-400mA (R_DS(ON)=1.2
: V_DSS=-20V, I_D=-300mA (R_DS(ON)=1.6
: V_DSS=-20V, I_D=-150mA (R_DS(ON)=2.7
@ V_GS=4.5V).
@ V_GS=2.5V).
@ V_GS=1.8V).
@ V_GS=-4.5V).
@ V_GS=-2.5V).
@ V_GS=-1.8V).
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL N-Ch P-Ch
Drain-Source Voltage
Gate-Source Voltage
Drain Current
DC @T_A=25
DC @T_A=85
Pulsed
Source-Drain Diode Current
Drain Power Dissipation
Maximum Junction Temperature
Storage Temperature Range
Thermal Resistance, Junction to Ambient
V_DSS
V_GSS
I_D*
I_DP
I_S
P_D*
T_j
T_stg
R_thJA*
20
-20
6
6
515 -390
370 -280
650 -650
450 -450
280
280
150
-55 150
446
Note 1) *Surface Mounted on FR4 Board, t 5sec
UNIT
V
V
mA
mW
/W
1
6
DIM MILLIMETERS
A
1.6+_ 0.05
A1
1.0 +_ 0.05
2
5
B
1.6+_ 0.05
B1
1.2 +_ 0.05
3
4
C
0.50
D
0.2+_ 0.05
H
0.5+_ 0.05
J
0.12+_ 0.05
P
P
P
5
1. Source 1
2. Gate 1
3. Drain 2
4. Source 2
5. Gate 2
6. Drain 1
TES6
Marking
A1 ^{Type Name}
Lot No.
PIN CONNECTION (TOP VIEW)
S₁ 1
6 D₁
1
6
G₁ 2
5 G₂
2
5
D_{2 3}
4 ^S2
3
4
2008. 9. 10
Revision No : 3
1/6