KML0D4N20V Datasheet, PDF (1/4 Pages) KEC(Korea Electronics) – N-Ch Trench MOSFET

SEMICONDUCTOR
TECHNICAL DATA
General Description
It’s mainly suitable for Load Switching Cell Phones, Battery Powered
Systems and Level-Shifter.
FEATURES
hV_DSS=20V, I_D=0.4A
hDrain-Soure ON Resistance
: R_DS(ON)=0.70ʃ @ V_GS=4.5V
: R_DS(ON)=0.85ʃ @ V_GS=2.5V
: R_DS(ON)=1.25ʃ @ V_GS=1.8V
hSuper High Dense Cell Design
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL N-Ch
Drain-Source Voltage
V_DSS
20
Gate-Source Voltage
V_GSS
‚6
DC @T_A=25
400
I_D*
Drain Current
DC @T_A=85
280
Pulsed
I_DP
650
Source-Drain Diode Current
I_S
125
Drain Power Dissipation
P_D*
150
Maximum Junction Temperature
T_j
150
Storage Temperature Range
T_stg
-55q150
Note 1) *Surface Mounted on 1”ƒ1” FR4 Board. t†5 sec
UNIT
V
V
mA
mW


PIN CONNECTION (TOP VIEW)
D
3
3
KML0D4N20V
N-Ch Trench MOSFET
E
B
2
DIM MILLIMETERS
A
1.2 +_0.05
B
0.8 +_0.05
1
3
C
0.5 +_ 0.05
D
0.3 +_ 0.05
E
1.2 +_ 0.05
G
0.8 +_ 0.05
P
P
H
0.40
J
0.12+_ 0.05
K
0.2 +_ 0.05
P
5
1. Source
2. Gate
3. Drain
VSM
Marking
Type Name
LA
2
1
G
S
2
1
2012. 3. 5
Revision No : 0
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