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KML0D3P20V Datasheet, PDF (1/4 Pages) KEC(Korea Electronics) – P-Ch Trench MOSFET | |||
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SEMICONDUCTOR
TECHNICAL DATA
General Description
It s Mainly Suitable for Load Switching Cell Phones, Battery Powered
Systems and Level-Shifter.
FEATURES
hVDSS=-20V, ID=-0.3A
hDrain-Soure ON Resistance
: RDS(ON)=1.2Ê @ VGS=-4.5V
: RDS(ON)=1.6Ê @ VGS=-2.5V
: RDS(ON)=2.7Ê @ VGS=-1.8V
KML0D3P20V
P-Ch Trench MOSFET
MAXIMUM RATING (Ta=25Â)
CHARACTERISTIC
SYMBOL
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGSS
Drain Current
DC @TA=25Â
ID*
DC @TA=85Â
Pulsed
IDP
Source-Drain Diode Current
IS
Drain Power Dissipation
PD*
Maximum Junction Temperature
Tj
Storage Temperature Range
Tstg
Thermal Resistance, Junction to Ambient RthJA*
Note 1) *Surface Mounted on FR4 Board, tÂ5sec
P-Ch
-20
Â6
-300
-210
-650
125
150
150
-55q150
446
PIN CONNECTION (TOP VIEW)
D
3
3
UNIT
V
V
mA
mW
Â
Â
Â/W
2
1
G
S
2
1
Marking
Type Name
LB
2012. 3. 5
Revision No : 0
1/4
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