KML0D3P20TV Datasheet, PDF (1/4 Pages) KEC(Korea Electronics) – P-Ch Trench MOSFET

SEMICONDUCTOR
TECHNICAL DATA
General Description
It s Mainly Suitable for Load Switching Cell Phones, Battery Powered
Systems and Level-Shifter.
FEATURES
hV_DSS=-20V, I_D=-0.3A
hDrain-Soure ON Resistance
: R_DS(ON)=1.2ʃ @ V_GS=-4.5V
: R_DS(ON)=1.6ʃ @ V_GS=-2.5V
: R_DS(ON)=2.7ʃ @ V_GS=-1.8V
KML0D3P20TV
P-Ch Trench MOSFET
+_
+_
+_
+_
+_
+_
+_
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Drain-Source Voltage
V_DSS
Gate-Source Voltage
V_GSS
Drain Current
DC @T_A=25
I_D*
DC @T_A=85
Pulsed
I_DP
Source-Drain Diode Current
I_S
Drain Power Dissipation
P_D*
Maximum Junction Temperature
T_j
Storage Temperature Range
T_stg
Thermal Resistance, Junction to Ambient R_thJA*
Note 1) *Surface Mounted on FR4 Board, t†5sec
P-Ch
-20
‚6
-300
-210
-650
125
170
150
-55q150
730
UNIT
V
V
mA
mW


/W
2013. 2. 25
Revision No : O
1/2