KMD7D5P40QA_15 Datasheet, PDF (1/4 Pages) KEC(Korea Electronics) – P-Ch Trench MOSFET

SEMICONDUCTOR
TECHNICAL DATA
GENERAL DESCRIPTION
This Trench MOSFET has better characteristics, such as low on resistance, low
gate charge and excellent avalanche characteristiscs. It is mainly suitable for
battery protection circuit.
FEATURES
hV_DSS=-40V, I_D=-7.5A.
hDrain-Source ON Resistance.
R_DS(ON)=30mʃ(Max.) @ V_GS=-10V
R_DS(ON)=37mʃ(Max.) @ V_GS=-4.5V
hSuper High Dense Cell Design
MOSFET Maximum Ratings (Ta=25 Unless otherwise noted)
CHARACTERISTIC
SYMBOL RATING UNIT
Drain Source Voltage
V_DSS
-40
V
Gate Source Voltage
V_GSS
‚20
V
Drain Current
DC@Ta=25
I_D*
-7.5
A
Pulsed
I_DP
-30
A
Drain Source Diode Forward Current
Drain Power Dissipation DC@Ta=25
Maximum Junction Temperature
Storage Temperature Range
I_S
-30
A
P_D*
2.0
W
T_j
150

T_stg
-55~150 
Thermal Resistance, Junction to Ambient
R_thJA*
62.5
Note : *Surface Mounted on 1 ƒ 1 FR4 Board, t†10sec
/W
PIN CONNECTION (TOP VIEW)
S1
8_D
1
8
S₂
7_D
2
7
3
6
S₃
6_D
G₄
4
5D
5
KMD7D5P40QA
P-Ch Trench MOSFET
H
T
DP
G
L
U
A
DIM MILLIMETERS
A
4.85+_ 0.2
8
5
B1
3.94+_ 0.2
B2
6.02+_ 0.3
B1 B2
D
0.4+_ 0.1
G
0.15+0.1/-0.05
1
4
H
1.63+_ 0.2
L
0.65+_ 0.2
P
1.27
T
0.20+0.1/-0.05
U
0.1 MAX
FLP-8
KMD7D5P
40QA
2012. 11. 27
Revision No : 2
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