KMD7D5P40QA Datasheet, PDF (1/4 Pages) KEC(Korea Electronics) – P-Ch Trench MOSFET

SEMICONDUCTOR
TECHNICAL DATA
GENERAL DESCRIPTION
This Trench MOSFET has better characteristics, such as low on resistance, low
gate charge and excellent avalanche characteristiscs. It is mainly suitable for
battery protection circuit.
FEATURES
V_DSS=-40V, I_D=-7.5A.
Drain-Source ON Resistance.
R_DS(ON)=30m (Max.) @ V_GS=-10V
R_DS(ON)=37m (Max.) @ V_GS=-4.5V
Super High Dense Cell Design
MOSFET Maximum Ratings (Ta=25 Unless otherwise noted)
CHARACTERISTIC
SYMBOL PATING UNIT
Drain Source Voltage
Gate Source Voltage
Drain Current
DC@Ta=25
Pulsed
Drain Source Diode Forward Current
Drain Power Dissipation DC@Ta=25
Maximum Junction Temperature
Storage Temperature Range
V_DSS
-40
V
V_GSS
20
V
I_D*
-7.5
A
I_DP
-30
A
I_S
-30
A
P_D*
2.0
W
T_j
150
T_stg
-55~150
Thermal Resistance, Junction to Ambient
R_thJA*
62.5
/W
Note : *Surface Mounted on 1” 1” FR4 Board, t 10sec
PIN CONNECTION (TOP VIEW)
S1
8_D
1
8
S₂
7_D
2
7
3
6
S₃
6_D
G₄
4
5D
5
KMD7D5P40QA
P-Ch Trench MOSFET
H
T
DP
G
L
A
8
5
DIM
A
B1
B2
D
MILLIMETERS
4.85 +_ 0.2
3.94 +_ 0.2
6.02+_ 0.3
0.4 +_ 0.1
B1 B2
G 0.15+0.1/-0.05
H
1.63 +_ 0.2
1
4
L
0.65 +_ 0.2
P
1.27
T 0.20+0.1/-0.05
FLP-8
KMD7D5P
40QA
2008. 9. 17
Revision No : 1
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