KMD6D0DN40Q Datasheet, PDF (1/5 Pages) KEC(Korea Electronics) – This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converters.

SEMICONDUCTOR
TECHNICAL DATA
GENERAL DESCRIPTION
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for DC/DC Converters.
FEATURES
hV_DSS=40V, I_D=6A.
hDrain-Source ON Resistance.
R_DS(ON)=38mʃ (Max.) @V_GS=10V
R_DS(ON)=50mʃ (Max.) @V_GS=4.5V
hSuper High Dense Cell Design
hVery fast switching
MAXIMUM RATING (Ta=25 Unless otherwise noted)
CHARACTERISTIC
SYMBOL RATING UNIT
Drain Source Voltage
Gate Source Voltage
Drain Current
T_a=25
Pulsed(Note1)
Peak Diode Recovery dv/dt (Note 2)
V_DSS
V_GSS
I_D *
I_DP
dv/dt
40
V
‚12
V
6
A
24
A
4.5
V/ns
Peak Diode Recovery di/dt
di/dt
200
A/us
Single pulsed Avalanche Energy (Note 3)
Repetitive Avalanche Energy (Note 1)
Maximum Junction Temperature
Storage Temperature Range
Thermal Resistance, Junction to Ambient
E_AS
E_AR
T_j
T_stg
R_thJA*
66
2.7
-50~150
-50~150
62.5
mJ
mJ


/W
* : Surface Mounted on FR4 Board (25mmƒ25mm, 1.5t, t†10sec)
KMD6D0DN40Q
Dual N-Ch Trench MOSFET
H
T
DP
G
L
A
DIM MILLIMETERS
A
4.85 +_ 0.2
B1
3.94 +_ 0.2
8
5
B2
6.02+_ 0.3
D
0.4 +_ 0.1
B1 B2
G 0.15+0.1/-0.05
H
1.63 +_ 0.2
1
4
L
0.65 +_ 0.2
P
1.27
T 0.20+0.1/-0.05
FLP-8
Marking
Type Name
KMD6D0DN
40Q
101
Lot No.
PIN CONNECTION (TOP VIEW)
S1
1
8
D1
1
8
G1 2
7 D1
2
7
S2
3
6 _D2
3
6
G2 ₄
5 D2
4
5
2012. 7. 26
Revision No : 0
1/5