KMC6D5CN20CA Datasheet, PDF (1/4 Pages) KEC(Korea Electronics) – Common N-Ch Trench MOSFET

SEMICONDUCTOR
TECHNICAL DATA
KMC6D5CN20CA
Common N-Ch Trench MOSFET
General Description
This Device is a Dual N-Channel MOSFET designed for use as a bi-
directional load switch, facilitated by its commom-drain configuration.
It s mainly suitable for Li-ion battery pack.
FEATURES
V_DSS=20V, I_D=6.5A.
Low Drain to Source On Resistance.
: R_DS(ON)=24.0m
: R_DS(ON)=25.0m
: R_DS(ON)=27.0m
: R_DS(ON)=32.0m
ESD Protection.
(Max.) @ V_GS=4.5V
(Max.) @ V_GS=4.0V
(Max.) @ V_GS=3.1V
(Max.) @ V_GS=2.5V
Super High Dense Cell Design.
C
8
5
E1 E
1
4
D
B
A
A1
GAUGE
PLANE
DIM
A
A1
B
C
D
E
E1
L
MILLIMETERS
1.2 MAX
0.15 MAX
0.28 +_ 1
0.65 Typ.
3.0 +_ 0.10
6.40+_ 0.20
4.40+_ 0.10
0.50+_ 0.20
0.25
L
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING UNIT
Drain to Source Voltage
V_DSS
20
V
Gate to Source Voltage
V_GSS
12
V
Drain Current
DC@Ta = 25 (Note1) ^ID
6.5
A
Pulsed
I_DP
26
Drain Power Dissipation @Ta = 25 (Note1)
P_D
1.5
W
Maximum Junction Temperature
T_j
150
Storage Temperature Range
T_stg
-55 150
Thermal Resistance, Junction to Ambient(Note1)
R_thJA
83.3
/W
Note 1) Surface Mounted on 1 1 FR4 Board, t 10sec
Marking
TSSOP-8
Type Name
KMC6D5
CN20CA
Lot No.
D
1
S1
2
S1
3
G1
4
PIN CONNECTION (TOP VIEW)
8
D
1
7
S2
2
Rg
6
S2
3
5
G2
4
8
Rg
7
6
5
2009. 6. 4
Revision No : 0
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