KMB8D2N60QA_15 Datasheet, PDF (1/4 Pages) KEC(Korea Electronics) – N-Ch Trench MOSFET

SEMICONDUCTOR
TECHNICAL DATA
GENERAL DESCRIPTION
This Trench MOSFET has better characteristics, such as fast switching time, low
on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly
suitable for Back-light Inverter.
FEATURES
hV_DSS=60V, I_D=8.2A.
hDrain-Source ON Resistance.
R_DS(ON)=22mʃ(Max.) @ V_GS=10V
R_DS(ON)=27mʃ(Max.) @ V_GS=4.5V
hSuper High Dense Cell Design
MOSFET Maximum Ratings (Ta=25 Unless otherwise noted)
CHARACTERISTIC
SYMBOL PATING UNIT
Drain Source Voltage
Gate Source Voltage
Drain Current
DC@T_A=25
DC@T_A=70
Pulsed
Drain Source Diode Forward Current
Drain Power Dissipation
T_A=25
T_A=70
Maximum Junction Temperature
Storage Temperature Range
Thermal Resistance, Junction to Ambient
Note : *Surface Mounted on 1ƒ1 FR4 Board
V_DSS
V_GSS
I_D*
I_DP
I_S
P_D*
T_j
T_stg
R_thJA*
60
‚20
8.2
6.6
40
3.0
3.0
2.0
150
-55~150
41
V
V
A
A
A
A
W
W


/W
KMB8D2N60QA
N-Ch Trench MOSFET
H
T
DP
G
L
U
A
DIM MILLIMETERS
A
4.85+_ 0.2
8
5
B1
3.94+_ 0.2
B2
6.02+_ 0.3
B1 B2
D
0.4+_ 0.1
G
0.15+0.1/-0.05
1
4
H
1.63+_ 0.2
L
0.65+_ 0.2
P
1.27
T
0.20+0.1/-0.05
U
0.1 MAX
FLP-8
KMB8D2N
60QA
PIN CONNECTION (TOP VIEW)
S1
8_D
1
8
S2
7D
2
7
3
6
S₃
6_D
G₄
4
5D
5
2007. 9. 3
Revision No : 1
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