KMB7D1DP30QA_15 Datasheet, PDF (1/5 Pages) KEC(Korea Electronics) – Dual P-Ch Trench MOSFET

SEMICONDUCTOR
TECHNICAL DATA
General Description
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for portable equipment and Load
Switch.
FEATURES
hV_DSS=-30V, I_D=-7.1A
hDrain-Source ON Resistance
R_DS(ON)=25mʃ(Max.) @ V_GS=-10V
R_DS(ON)=41mʃ(Max.) @ V_GS=-4.5V
hSuper Hige Dense Cell Design
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL P-Ch UNIT
Drain-Source Voltage
Gate-Source Voltage
Drain Current
DC@T_A=25
DC@T_A=70
Pulsed
Drain-Source-Diode Forward Current
Drain Power Dissipation
T_A=25
T_A=70
Maximum Junction Temperature
Storage Temperature Range
Thermal Resistance, Junction to Ambient
Note : Surface Mounted on FR4 Board, t†10sec.
V_DSS
V_GSS
I_D
I_DP
I_S
P_D
T_j
T_stg
R_thJA
-30
V
‚20
V
-7.1
-5.7
A
-40
-1.7
A
1.1
W
0.7
150

-55q150 
110 /W
KMB7D1DP30QA
Dual P-Ch Trench MOSFET
H
T
DP
G
L
U
A
DIM MILLIMETERS
A
4.85+_ 0.2
8
5
B1
3.94+_ 0.2
B2
6.02+_ 0.3
B1 B2
D
0.4+_ 0.1
G
0.15+0.1/-0.05
1
4
H
1.63+_ 0.2
L
0.65+_ 0.2
P
1.27
T
0.20+0.1/-0.05
U
0.1 MAX
FLP-8
KMB7D1DP
30QA
705
PIN CONNECTION (TOP VIEW)
S1
1
8
D1
1
8
G1 2
7 D1
2
7
S2
3
6 _D2
3
6
G2 ₄
5 D2
4
5
2007. 4. 17
Revision No : 0
1/5