KMB7D1DP30QA Datasheet, PDF (1/5 Pages) KEC(Korea Electronics) – Dual P-Ch Trench MOSFET

SEMICONDUCTOR
TECHNICAL DATA
General Description
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for portable equipment and SMPS.
FEATURES
V_DSS=-30V, I_D=-7.1A
Drain-Source ON Resistance
R_DS(ON)=25m (Max.) @ V_GS=-10V
R_DS(ON)=41m (Max.) @ V_GS=-4.5V
Super Hige Dense Cell Design
KMB7D1DP30QA
Dual P-Ch Trench MOSFET
H
T
DP
G
L
A
8
5
DIM MILLIMETERS
A
4.85+_ 0.2
B1
3.94 +_ 0.2
B2
6.02+_ 0.3
D
0.4 +_ 0.1
B1 B2
G 0.15+0.1/-0.05
H
1.63 +_ 0.2
1
4
L
0.65 +_ 0.2
P
1.27
T 0.20+0.1/-0.05
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL N-Ch UNIT
Drain-Source Voltage
Gate-Source Voltage
Drain Current
DC@T_A=25
DC@T_A=70
Pulsed
Drain-Source-Diode Forward Current
V_DSS
V_GSS
I_D
I_DP
I_S
-30
V
22
V
-7.1
-5.7
A
-40
-1.7
A
Drain Power Dissipation
T_A=25
T_A=70
1.1
P_D
W
0.7
Maximum Junction Temperature
T_j
150
Storage Temperature Range
T_{stg -55 150}
Thermal Resistance, Junction to Ambient
R_thJA
110
/W
Note : Surface Mounted on FR4 Board, t 10sec.
FLP-8
KMB7D1DP
30QA
705
PIN CONNECTION (TOP VIEW)
S1
1
8
D1
1
8
G1 2
7 D1
2
7
S2
3
6 _D2
3
6
G2 ₄
5 D2
4
5
2007. 4. 17
Revision No : 0
1/5