KMB7D0NP30QA_15 Datasheet, PDF (1/9 Pages) KEC(Korea Electronics) – N and P-Ch Trench MOSFET

SEMICONDUCTOR
TECHNICAL DATA
General Description
Switching regulator and DC-DC Converter applications.
It s mainly suitable for Back-light Inverter.
FEATURES
hN-Channel
: V_DSS=30V, I_D=7A.
: R_DS(ON)=23.5mʃ(Max.) @ V_GS=10V
: R_DS(ON)=39mʃ(Max.) @ V_GS=4.5V
hP-Channel
: V_DSS=-30V, I_D=-5A.
: R_DS(ON)=45.5mʃ(Max.) @ V_GS=-10V
: R_DS(ON)=80mʃ(Max.) @ V_GS=-4.5V
hSuper High Dense Cell Design.
hReliable and rugged.
KMB7D0NP30QA
N and P-Ch Trench MOSFET
H
T
DP
G
L
U
A
DIM MILLIMETERS
A
4.85+_ 0.2
8
5
B1
3.94+_ 0.2
B2
6.02+_ 0.3
B1 B2
D
0.4+_ 0.1
G
0.15+0.1/-0.05
1
4
H
1.63+_ 0.2
L
0.65+_ 0.2
P
1.27
T
0.20+0.1/-0.05
U
0.1 MAX
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Drain Current
DC
Pulsed ^(note1)
Source-Drain Diode Current
Drain Power Dissipation
Maximum Junction Temperature
Storage Temperature Range
V_DSS
V_GSS
I_D*
I_DP
I_S
P_D*
T_j
T_stg
Thermal Resistance, Junction to Ambient R_thJA*
Note : *Sorface Mounted on FR4 Board
N-Ch
P-Ch
30
-30
‚20
‚20
7
-5
29
-20
1.7
-1.7
2
150
-55q150
62.5
UNIT
V
V
A
A
W


/W
FLP-8
PIN CONNECTION (TOP VIEW)
S1
1
G1 2
S2
3
G2 ₄
8
D1
7 D1
6 _D2
5 D2
D1 D1
S2
G2
G1
S1
N-Channel MOSFET
D2 D2
P-Channel MOSFET
2011. 3. 18
Revision No : 3
1/9