KMB7D0NP30QA Datasheet, PDF (1/9 Pages) KEC(Korea Electronics) – N and P-Ch Trench MOSFET

SEMICONDUCTOR
TECHNICAL DATA
KMB7D0NP30QA
N and P-Ch Trench MOSFET
General Description
Switching regulator and DC-DC Converter applications.
It s mainly suitable for power management in PC,
portable equipment and battery powered systems.
FEATURES
N-Channel
: V_DSS=30V, I_D=7A.
: R_DS(ON)=23.5m (Max.) @ V_GS=10V
: R_DS(ON)=39m (Max.) @ V_GS=4.5V
P-Channel
: V_DSS=-30V, I_D=-5A.
: R_DS(ON)=45.5m (Max.) @ V_GS=-10V
: R_DS(ON)=80m (Max.) @ V_GS=-4.5V
Super High Dense Cell Design.
Reliable and rugged.
H
T
DP
G
L
A
DIM MILLIMETERS
A
4.85 +_ 0.2
B1
3.94 +_ 0.2
8
5
B2
6.02+_ 0.3
D
0.4 +_ 0.1
B1 B2
G 0.15+0.1/-0.05
H
1.63 +_ 0.2
1
4
L
0.65 +_ 0.2
P
1.27
T 0.20+0.1/-0.05
FLP-8
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Drain Current
DC
Pulsed ^(note1)
Source-Drain Diode Current
Drain Power Dissipation
Maximum Junction Temperature
Storage Temperature Range
Thermal Resistance, Junction to Ambient
Note : *Sorface Mounted on FR4 Board
V_DSS
V_GSS
I_D*
I_DP
I_S
P_D*
T_j
T_stg
R_thJA*
N-Ch
P-Ch
30
-30
22
22
7
-5
29
-20
1.7
-1.7
2
150
-55 150
62.5
UNIT
V
V
A
A
W
/W
PIN CONNECTION (TOP VIEW)
S1
1
G1 2
S2
3
G2 ₄
8
D1
7 D1
6 _D2
5 D2
D1 D1
S2
G2
G1
S1
N-Channel MOSFET
D2 D2
P-Channel MOSFET
2007. 6. 28
Revision No : 2
1/9