KMB7D0N40QA Datasheet, PDF (1/4 Pages) KEC(Korea Electronics) – N-Ch Trench MOSFET

SEMICONDUCTOR
TECHNICAL DATA
GENERAL DESCRIPTION
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for power management in pc, portable
equipment and battery powered systems.
FEATURES
V_DSS=40V, I_D=7A.
Drain-Source ON Resistance.
R_DS(ON)=25m (Max.) @V_GS=10V
R_DS(ON)=45m (Max.) @V_GS=4.5V
Super High Dense Cell Design
High Power and Current Handing Capability
KMB7D0N40QA
N-Ch Trench MOSFET
H
T
DP
G
L
A
DIM MILLIMETERS
A
4.85 +_ 0.2
B1
3.94 +_ 0.2
8
5
B2
6.02+_ 0.3
D
0.4 +_ 0.1
B1 B2
G 0.15+0.1/-0.05
H
1.63 +_ 0.2
1
4
L
0.65 +_ 0.2
P
1.27
T 0.20+0.1/-0.05
Maximum Ratings (Ta=25 Unless otherwise noted)
CHARACTERISTIC
SYMBOL PATING
Drain Source Voltage
Gate Source Voltage
Drain Current
DC
Pulsed
Drain Source Diode Forward Current
V_DSS
40
V_GSS
25
I_D *
7
I_DP
22
I_S
1.7
Drain Power Dissipation
T_A=25
T_A=100
Maximum Junction Temperature
Storage Temperature Range
2
P_D *
1.44
T_j
-55~150
T_stg
-55~150
Thermal Resistance, Junction to Ambient
R_thJA*
62.5
Note) *Surface Mounted on 1 1 FR4 Board.
UNIT
V
V
A
A
A
W
W
/W
PIN CONNECTION (TOP VIEW)
S1
8_D
1
8
S2
7D
2
7
3
6
S₃
6_D
G₄
4
5D
5
FLP-8
KMB7D0N
40QA
2008. 1. 25
Revision No : 0
1/4