KMB7D0DN40QB Datasheet, PDF (1/5 Pages) KEC(Korea Electronics) – Dual N-Ch Trench MOSFET

SEMICONDUCTOR
TECHNICAL DATA
GENERAL DESCRIPTION
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for power management in PC, portable
equipment and battery powered systems.
FEATURES
hV_DSS=40V, I_D=7A.
hDrain to Source on Resistance.
R_DS(ON)=25mʃ (Max.) @V_GS=10V
R_DS(ON)=45mʃ (Max.) @V_GS=4.5V
Maximum Ratings (Ta=25 Unless otherwise noted)
CHARACTERISTIC
SYMBOL PATING UNIT
Drain to Source Voltage
Gate to Source Voltage
Drain Current
T_a=25 (Note1)
Pulsed
V_DSS
40
V
V_GSS
‚20
V
I_D
7
A
I_DP
36
A
Drain to Source Diode Forward Current
T_a=25 (Note1)
Drain Power Dissipation
T_a=100(Note1)
Maximum Junction Temperature
Storage Temperature Range
I_S
7
A
2
W
P_D
1.44 W
T_j -55~150 _
T_stg -55~150 _
Thermal Resistance, Junction to Ambient(Note1)
R_thJA
Note1) Surface Mounted on 1 ƒ1 FR4 Board., t†10sec
62.5 /W
KMB7D0DN40QB
Dual N-Ch Trench MOSFET
H
T
DP
G
L
U
A
DIM MILLIMETERS
A
4.85+_ 0.2
8
5
B1
3.94+_ 0.2
B2
6.02+_ 0.3
B1 B2
D
0.4+_ 0.1
G
0.15+0.1/-0.05
1
4
H
1.63+_ 0.2
L
0.65+_ 0.2
P
1.27
T
0.20+0.1/-0.05
U
0.1 MAX
FLP-8
KMB7D0DN
40QB
PIN CONNECTION (TOP VIEW)
S₁
1
8
D₁
1
8
G₁
2
7
D₁
2
7
S₂
3
6
D₂
3
6
G₂
4
5
D₂
4
5
2012. 1. 13
Revision No : 0
1/5