KMB7D0DN40QA_09 Datasheet, PDF (1/5 Pages) KEC(Korea Electronics) – Dual N-Ch Trench MOSFET

SEMICONDUCTOR
TECHNICAL DATA
GENERAL DESCRIPTION
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for power management in PC, portable
equipment and battery powered systems.
FEATURES
V_DSS=40V, I_D=7A.
Drain to Source on Resistance.
R_DS(ON)=25m (Max.) @V_GS=10V
R_DS(ON)=45m (Max.) @V_GS=4.5V
Maximum Ratings (Ta=25 Unless otherwise noted)
CHARACTERISTIC
SYMBOL PATING UNIT
Drain to Source Voltage
Gate to Source Voltage
Drain Current
T_a=25
Pulsed
Drain to Source Diode Forward Current
V_DSS
V_GSS
I_D
I_DP
I_S
40
V
20 V
7
A
36
A
1.7
A
T_a=25
Drain Power Dissipation
T_a=100
Maximum Junction Temperature
Storage Temperature Range
2
W
P_D
1.44 W
T_j -55~150
T_stg -55~150
Thermal Resistance, Junction to Ambient
R_thJA
62.5
/W
Note1) Surface Mounted on 1” 1” FR4 Board., t 10sec
KMB7D0DN40QA
Dual N-Ch Trench MOSFET
H
T
DP
G
L
A
DIM MILLIMETERS
A
4.85 +_ 0.2
B1
3.94 +_ 0.2
8
5
B2
6.02+_ 0.3
D
0.4 +_ 0.1
B1 B2
G 0.15+0.1/-0.05
H
1.63 +_ 0.2
1
4
L
0.65 +_ 0.2
P
1.27
T 0.20+0.1/-0.05
FLP-8
KMB7D0DN
40QA
PIN CONNECTION (TOP VIEW)
S₁
1
8
D₁
1
8
G₁
2
7
D₁
2
7
S₂
3
6
D₂
3
6
G₂
4
5
D₂
4
5
2009. 9. 24
Revision No : 2
1/5