KMB6D6N30Q Datasheet, PDF (1/5 Pages) KEC(Korea Electronics) – N-Ch Trench MOSFET

SEMICONDUCTOR
TECHNICAL DATA
KMB6D6N30Q
N-Ch Trench MOSFET
General Description
Switching regulator and DC-DC Converter applications.
It s mainly suitable for power management in PC,
portable equipment and battery powered systems.
FEATURES
V_DSS=30V, I_D=6.6A.
Low Drain-Source ON Resistance.
: R_DS(ON)=28m (typ.) @ V_GS=10V
: R_DS(ON)=56m (typ.) @ V_GS=4.5V
Super High Dense Cell Design.
High Power and Current Handling Capability.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING UNIT
Drain-Source Voltage
V_DSS
30
V
Gate-Source Voltage
V_GSS
20
V
Drain Current
DC
I_D *
6.6
A
Pulsed ^(note1)
I_DP *
26
Source-Drain Diode Current
I_S
1.7
A
Drain Power Dissipation
P_D *
2.5
W
Maximum Junction Temperature
T_j
150
Storage Temperature Range
T_stg
-55 150
Thermal Resistance, Junction to Ambient R_thJA*
50
/W
* : Surface Mounted on FR4 Board, t 10sec.
H
T
DP
G
L
A
8
5
B1 B2
1
4
DIM MILLIMETERS
A 5.05+0.25/-0.20
B1 3.90 +_ 0.3
B2 6.00 +_ 0.4
D
0.42 +_ 0.1
G
0.15 +_ 0.1
H
1.4 +_ 0.2
L
0.5 +_ 0.2
P
1.27 Typ.
T
0.20 +_ 0.05
FLP-8 (1)
PIN CONNECTION (TOP VIEW)
DDDD
S
1
S
2
S
3
G
4
8
D
7
D
6
D
G
5
D
SSS
2007. 3. 22
Revision No : 1
1/5