KMB6D0NP40QA Datasheet, PDF (1/8 Pages) KEC(Korea Electronics) – N and P-Ch Trench MOSFET

SEMICONDUCTOR
TECHNICAL DATA
General Description
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for Back-light Inverter.
FEATURES
N-Channel
: V_DSS=40V, I_D=6A.
: R_DS(ON)=31m (Max.) @ V_GS=10V
: R_DS(ON)=45m (Max.) @ V_GS=4.5V
P-Channel
: V_DSS=-40V, I_D=-5A.
: R_DS(ON)=45m (Max.) @ V_GS=-10V
: R_DS(ON)=63m (Max.) @ V_GS=-4.5V
Super High Dense Cell Design.
KMB6D0NP40QA
N and P-Ch Trench MOSFET
H
T
DP
G
L
A
DIM MILLIMETERS
A
4.85+_ 0.2
8
5
B1
3.94+_ 0.2
B2
6.02+_ 0.3
B1 B2
D
0.4+_ 0.1
G
0.15+0.1/-0.05
1
4
H
1.63+_ 0.2
L
0.65+_ 0.2
P
1.27
T
0.20+0.1/-0.05
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Drain-Source Voltage
Gate-Source Voltage
Drain Current
DC
Pulsed
Source-Drain Diode Current
T_A=25
Drain Power Dissipation
T_A=70
Maximum Junction Temperature
Storage Temperature Range
Thermal Resistance, Junction to Ambient
* : Surface Mounted on FR4 Board.
SYMBOL
V_DSS
V_GSS
I_D*
I_DP*
I_S*
P_D*
T_j
T_stg
R_thJA*
N-Ch P-Ch
40
-40
20
20
6
-5
20
-20
3.0
-3.2
2
2
1.3
1.3
150
-55 150
62.5
UNIT
V
V
A
A
W
/W
FLP-8
Marking
Type Name
KMB6D0NP
40QA
Lot No.
PIN CONNECTION (TOP VIEW)
S1
1
8
D1
1
8
G1 2
7
D1
2
7
S2
3
6
D2
3
6
G2 ₄
5
D2
4
5
2008. 8. 12
Revision No : 0
1/8