KMB6D0DN35QB_15 Datasheet, PDF (1/5 Pages) KEC(Korea Electronics) – Dual N-Ch Trench MOSFET

SEMICONDUCTOR
TECHNICAL DATA
GENERAL DESCRIPTION
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for DC/DC Converters.
FEATURES
hV_DSS=35V, I_D=6A.
hDrain-Source ON Resistance.
R_DS(ON)=28mʃ (Max.) @V_GS=10V
R_DS(ON)=42mʃ (Max.) @V_GS=4.5V
hSuper High Dense Cell Design
hVery fast switching
KMB6D0DN35QB
Dual N-Ch Trench MOSFET
H
T
DP
G
L
U
A
DIM MILLIMETERS
A
4.85+_ 0.2
8
5
B1
3.94+_ 0.2
B2
6.02+_ 0.3
B1 B2
D
0.4+_ 0.1
G
0.15+0.1/-0.05
1
4
H
1.63+_ 0.2
L
0.65+_ 0.2
P
1.27
T
0.20+0.1/-0.05
U
0.1 MAX
MAXIMUM RATING (Ta=25 Unless otherwise noted)
CHARACTERISTIC
SYMBOL PATING UNIT
Drain Source Voltage
V_DSS
Gate Source Voltage
V_GSS
Drain Current
T_a=25
I_D *
Pulsed(Note1)
I_DP
Drain Source Diode Forward Current
I_S
Drain Power Dissipation
T_a=25
P_D *
Maximum Junction Temperature
T_j
Storage Temperature Range
T_stg
Thermal Resistance, Junction to Ambient
R_thJA*
* : Surface Mounted on FR4 Board (25mmƒ25mm, 1.5t)
35V
‚20
6
24
1.3
2
-50~150
-50~150
62.5
V
V
A
A
A
W


/W
FLP-8
Marking
Type Name
KMB6D0DN
35QB
101
Lot No.
PIN CONNECTION (TOP VIEW)
S1 1
8
D1
1
8
G1 2
7 D1
2
7
S2 ₃
6 _D2
3
6
G2 ₄
5 D2
4
5
2011. 2. 25
Revision No : 0
1/5