KMB6D0DN30QA_15 Datasheet, PDF (1/5 Pages) KEC(Korea Electronics) – Dual N-Ch Trench MOSFET

SEMICONDUCTOR
TECHNICAL DATA
GENERAL DESCRIPTION
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for portable equipment and DC-DC
Converter Applications.
FEATURES
hV_DSS=30V, I_D=6A.
hDrain-Source ON Resistance.
R_DS(ON)=28mʃ (Max.) @V_GS=10V
R_DS(ON)=42mʃ (Max.) @V_GS=4.5V
hSuper High Dense Cell Design
hHigh Power and Current Handing Capability
MAXIMUM RATING (Ta=25 Unless otherwise noted)
CHARACTERISTIC
SYMBOL PATING
Drain Source Voltage
Gate Source Voltage
Drain Current
DC
Pulsed
Drain Source Diode Forward Current
Drain Power Dissipation
25
V_DSS
V_GSS
I_D *
I_DP
I_S
P_D *
30
‚20
6
30
1.7
2
Maximum Junction Temperature
T_j
150
Storage Temperature Range
T_stg
-50~150
Thermal Resistance, Junction to Ambient
R_thJA*
62.5
Note> *Surface Mounted on FR4 Board, t†10sec.
UNIT
V
V
A
A
A
W


/W
KMB6D0DN30QA
Dual N-Ch Trench MOSFET
H
T
DP
G
L
U
A
DIM MILLIMETERS
A
4.85+_ 0.2
8
5
B1
3.94+_ 0.2
B2
6.02+_ 0.3
B1 B2
D
0.4+_ 0.1
G
0.15+0.1/-0.05
1
4
H
1.63+_ 0.2
L
0.65+_ 0.2
P
1.27
T
0.20+0.1/-0.05
U
0.1 MAX
FLP-8
KMB6D0DN
30QA
PIN CONNECTION (TOP VIEW)
S1
1
8
D1
1
8
G1 2
7 D1
2
7
S2
3
6 _D2
3
6
G2 ₄
5 D2
4
5
2008. 3. 21
Revision No : 1
1/5