KMB6D0DN30QA_08 Datasheet, PDF (1/5 Pages) KEC(Korea Electronics) – Dual N-Ch Trench MOSFET

SEMICONDUCTOR
TECHNICAL DATA
GENERAL DESCRIPTION
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for portable equipment and DC-DC
Converter Applications.
FEATURES
V_DSS=30V, I_D=6A.
Drain-Source ON Resistance.
R_DS(ON)=28m (Max.) @V_GS=10V
R_DS(ON)=42m (Max.) @V_GS=4.5V
Super High Dense Cell Design
High Power and Current Handing Capability
MAXIMUM RATING (Ta=25 Unless otherwise noted)
CHARACTERISTIC
SYMBOL PATING
Drain Source Voltage
Gate Source Voltage
Drain Current
DC
Pulsed
Drain Source Diode Forward Current
Drain Power Dissipation
25
Maximum Junction Temperature
Storage Temperature Range
V_DSS
V_GSS
I_D *
I_DP
I_S
P_D *
T_j
T_stg
30
20
6
30
1.7
2
150
-50~150
Thermal Resistance, Junction to Ambient
R_thJA*
62.5
Note> *Surface Mounted on FR4 Board, t 10sec.
UNIT
V
V
A
A
A
W
/W
KMB6D0DN30QA
Dual N-Ch Trench MOSFET
H
T
DP
G
L
A
8
5
DIM
A
B1
B2
D
MILLIMETERS
4.85 +_ 0.2
3.94 +_ 0.2
6.02+_ 0.3
0.4 +_ 0.1
B1 B2
G 0.15+0.1/-0.05
H
1.63 +_ 0.2
1
4
L
0.65 +_ 0.2
P
1.27
T 0.20+0.1/-0.05
FLP-8
KMB6D0DN
30QA
PIN CONNECTION (TOP VIEW)
S1
1
8
D1
1
8
G1 2
7
D1
2
7
S2
3
6
D2
3
6
G2 ₄
5
D2
4
5
2008. 3. 21
Revision No : 1
1/5