KMB6D0DN30QA Datasheet, PDF (1/5 Pages) KEC(Korea Electronics) – Dual N-Ch Trench MOSFET

SEMICONDUCTOR
TECHNICAL DATA
GENERAL DESCRIPTION
This planer stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for portable equipment and SMPS.
FEATURES
V_DSS=30V, I_D=6A.
Drain-Source ON Resistance.
R_DS(ON)=28m (Max.) @V_GS=10V
R_DS(ON)=42m (Max.) @V_GS=4.5V
Super High Dense Cell Design
High Power and Current Handing Capability
KMB6D0DN30QA
Dual N-Ch Trench MOSFET
H
T
DP
G
L
A
DIM MILLIMETERS
A
4.85 +_ 0.2
B1
3.94 +_ 0.2
8
5
B2
6.02+_ 0.3
D
0.4 +_ 0.1
B1 B2
G 0.15+0.1/-0.05
H
1.63 +_ 0.2
1
4
L
0.65 +_ 0.2
P
1.27
T 0.20+0.1/-0.05
MAXIMUM RATING (Ta=25 Unless otherwise noted)
CHARACTERISTIC
SYMBOL PATING UNIT
Drain Source Voltage
Gate Source Voltage
Drain Current
DC
Pulsed ^(note1)
Drain Source Diode Forward Current
25
Drain Power Dissipation
100
Maximum Junction Temperature
Storage Temperature Range
Thermal Resistance, Junction to Ambient
* : Surface Mounted on FR4 Board, t 10sec.
V_DSS
V_GSS
I_D *
I_DP
I_S
P_D *
T_j
T_stg
R_thJA*
30
V
20
V
6
A
20
A
1.3
A
2
W
1.6
W
-50~150
-50~150
78
/W
PIN CONNECTION (TOP VIEW)
S1 1
8
D1
1
8
G1 2
7 D1
2
7
S2 ₃
6 _D2
3
6
G2 ₄
5 D2
4
5
FLP-8
2007. 4. 3
Revision No : 0
1/5