KMB4D5DN60QA_15 Datasheet, PDF (1/4 Pages) KEC(Korea Electronics) – Dual N-Ch Trench MOSFET

SEMICONDUCTOR
TECHNICAL DATA
GENERAL DESCRIPTION
This Trench MOSFET has better characteristics, such as fast switching time, low
on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly
suitable for load switch and Back light inverter.
FEATURES
hV_DSS=60V, I_D=4.5A.
hDrain-Source ON Resistance.
R_DS(ON)=56mʃ(Max.) @ V_GS=10V
R_DS(ON)=77mʃ(Max.) @ V_GS=4.5V
MOSFET Maximum Ratings (Ta=25 Unless otherwise noted)
CHARACTERISTIC
SYMBOL PATING UNIT
Drain Source Voltage
Gate Source Voltage
Drain Current
V_DSS
60
V
V_GSS
‚20
V
DC@Ta=25
I_D*
4.5
A
Pulsed
I_DP
20
A
Drain Source Diode Forward Current
Drain Power Dissipation @Ta=25
Maximum Junction Temperature
Storage Temperature Range
I_S
3
A
P_D*
2
W
T_j
150

T_stg
-55~150 
Thermal Resistance, Junction to Ambient
R_thJA*
62.5 /W
Note> *Surface Mounted on 1 ƒ1 FR4 Board, t†10sec.
KMB4D5DN60QA
Dual N-Ch Trench MOSFET
H
T
DP
G
L
U
A
DIM MILLIMETERS
A
4.85+_ 0.2
8
5
B1
3.94+_ 0.2
B2
6.02+_ 0.3
B1 B2
D
0.4+_ 0.1
G
0.15+0.1/-0.05
1
4
H
1.63+_ 0.2
L
0.65+_ 0.2
P
1.27
T
0.20+0.1/-0.05
U
0.1 MAX
FLP-8
KMB4D5DN
60QA
PIN CONNECTION (TOP VIEW)
S₁ 1
8 D₁
1
8
G₁ 2
7 D₁
2
7
S₂ 3
6 D₂
3
6
G₂ 4
5 D₂
4
5
2008. 5. 27
Revision No : 0
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