KMB4D0N30SA_15 Datasheet, PDF (1/5 Pages) KEC(Korea Electronics) – N-Ch Trench MOSFET

SEMICONDUCTOR
TECHNICAL DATA
General Description
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for portable equipment.
FEATURES
hV_DSS=30V, I_D=4A
hDrain-Source ON Resistance
R_DS(ON)=47mʃ(Max.) @ V_GS=10V
R_DS(ON)=65mʃ(Max.) @ V_GS=4.5V
hSuper High Dense Cell Design
KMB4D0N30SA
N-Ch Trench MOSFET
E
L BL
DIM MILLIMETERS
A
2.93+_ 0.20
B 1.30+0.20/-0.15
2
3
C
1.30 MAX
D 0.40+0.15/-0.05
E 2.40+0.30/-0.20
1
G
1.90
H
0.95
J 0.13+0.10/-0.05
K
0.00 ~ 0.10
Q
P
P
L
0.55
M
0.20 MIN
N 1.00+0.20/-0.10
P
7
Q
0.1 MAX
M
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL N-Ch UNIT
Drain-Source Voltage
Gate-Source Voltage
Drain Current
DC@T_A=25
DC@T_A=70
Pulsed
Drain-Source-Diode Forward Current
Drain Power Dissipation
T_A=25
T_A=70
Maximum Junction Temperature
Storage Temperature Range
V_DSS
V_GSS
I_D*
I_DP*
I_S
P_D*
T_j
T_stg
30
V
‚20
V
4.0
3.5
A
20
1.04
A
1.25
W
0.8
150

-55q150 
Thermal Resistance, Junction to Ambient
R_thJA*
Note > *Surface Mounted on 1ƒ1 FR4 Board, t † 5sec
100 /W
PIN CONNECTION (TOP VIEW)
D
3
3
SOT-23
KNA
2
1
G
S
2
1
2008. 11. 3
Revision No : 1
1/5