KMB4D0N30SA Datasheet, PDF (1/5 Pages) KEC(Korea Electronics) – N-Ch Trench MOSFET

SEMICONDUCTOR
TECHNICAL DATA
General Description
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for portable equipment and SMPS.
FEATURES
V_DSS=30V, I_D=4A
Drain-Source ON Resistance
R_DS(ON)=47m (Max.) @ V_GS=10V
R_DS(ON)=65m (Max.) @ V_GS=4.5V
Super Hige Dense Cell Design
KMB4D0N30SA
N-Ch Trench MOSFET
E
L BL
2
3
1
P
P
M
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
2.93+_ 0.20
1.30+0.20/-0.15
1.30 MAX
0.40+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Drain-Source Voltage
Gate-Source Voltage
Drain Current
DC@T_A=25
DC@T_A=70
Pulsed
Drain-Source-Diode Forward Current
Drain Power Dissipation
T_A=25
T_A=70
Maximum Junction Temperature
Storage Temperature Range
Thermal Resistance, Junction to Ambient
Note : Surface Mounted on FR4 Board, t 10sec.
PIN CONNECTION (TOP VIEW)
D
3
SYMBOL N-Ch UNIT
V_DSS
V_GSS
30
V
20
V
4.0
I_D
3.5
A
I_DP
20
I_S
1.04
A
1.25
P_D
W
0.8
T_j
150
T_stg
-55 150
R_thJA
130
/W
3
SOT-23
KND
2
1
G
S
2
1
2007. 4. 17
Revision No : 0
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