KMB3D9N40TA Datasheet, PDF (1/5 Pages) KEC(Korea Electronics) – N-Ch Trench MOSFET

SEMICONDUCTOR
TECHNICAL DATA
General Description
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for Load switch and Back-Light
Inverter.
FEATURES
V_DSS=40V, I_D=3.9A
Drain-Source ON Resistance
R_DS(ON)=45m (Max.) @ V_GS=10V
R_DS(ON)=58m (Max.) @ V_GS=4.5V
Super High Dense Cell Design
KMB3D9N40TA
N-Ch Trench MOSFET
E
K
B
2
3
1
DIM
A
B
C
D
E
F
G
H
I
J
K
L
MILLIMETERS
2.9 +_0.2
1.6+0.2/-0.1
0.70+_ 0.05
0.4+_ 0.1
2.8+0.2/-0.3
1.9+_ 0.2
0.95
0.16+_ 0.05
0.00-0.10
0.25+0.25/-0.15
0.60
0.55
H
J
J
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Drain-Source Voltage
Gate-Source Voltage
DC@Ta=25
Drain Current
DC@Ta=70
Pulsed
Drain-Source-Diode Forward Current
Drain Power Dissipation
Ta=25
Ta=70
Maximum Junction Temperature
Storage Temperature Range
Thermal Resistance, Junction to Ambient
Note > *Surface Mounted on 1 1 FR4 Board, t
SYMBOL N-Ch
V_DSS
40
V_GSS
20
3.9
I_D
3.1
I_DP
16
I_S
0.8
1.25
P_D
0.8
T_j
150
T_stg
-55 150
R_thJA
100
5sec
UNIT
V
V
A
A
W
/W
PIN CONNECTION (TOP VIEW)
D
3
3
TSM
Marking
A 2 ^{Type Name}
Lot No.
2
1
G
S
2
1
2008. 6. 10
Revision No : 0
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