KMB3D5PS30QA Datasheet, PDF (1/5 Pages) KEC(Korea Electronics) – SBD and P-Ch Trench MOSFET

SEMICONDUCTOR
TECHNICAL DATA
GENERAL DESCRIPTION
It is particularly suited for switching such as DC/DC Converters.
It is driven as low as 4.5V and fast switching, high efficiency.
FEATURES
V_DSS=-30V, I_D=-3.5A.
Drain-Source ON Resistance.
R_DS(ON)=85m (Max.) @ V_GS=-10V
R_DS(ON)=180m (Max.) @ V_GS=-4.5V
MOSFET Maximum Ratings (Ta=25
CHARACTERISTIC
Drain Source Voltage
Gate Source Voltage
Drain Current
DC
Pulsed
25
Drain Power Dissipation
100
Maximum Junction Temperature
Storage Temperature Range
Thermal Resistance, Junction to Ambient
Note : *Sorface Mounted on FR4 Board
Unless otherwise noted)
SYMBOL PATING UNIT
V_DSS
V_GSS
I_D *
I_DP
-30
V
20
V
-3.5
A
-20
A
1.4
W
P_D *
1
W
T_j
150
T_stg
-55~150
R_thJA*
90
/W
Schottky Diode Maximum Ratings (Ta=25 Unless otherwise noted)
CHARACTERISTIC
SYMBOL PATING UNIT
Repetitive Peak Reverse Voltage
Average Forward Current
V_RRM
30
V
I_F
1.4
A
KMB3D5PS30QA
SBD and P-Ch Trench MOSFET
H
T
DP
G
L
A
8
5
DIM
A
B1
B2
D
MILLIMETERS
4.85 +_ 0.2
3.94 +_ 0.2
6.02+_ 0.3
0.4 +_ 0.1
B1 B2
G 0.15+0.1/-0.05
H
1.63 +_ 0.2
1
4
L
0.65 +_ 0.2
P
1.27
T 0.20+0.1/-0.05
FLP-8
Marking
Type Name
KMB3D5PS
30QA
702
Lot No.
PIN CONNECTION (TOP VIEW)
A
1
8
C
1
8
A
2
7
C
2
7
S
3
6
D
3
6
G
4
5
D
4
5
2007. 8. 13
Revision No : 2
1/5