KMB3D5N40SA_15 Datasheet, PDF (1/5 Pages) KEC(Korea Electronics) – N-Ch Trench MOSFET

SEMICONDUCTOR
TECHNICAL DATA
General Description
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for Load switch and Back-Light
Inverter.
FEATURES
hV_DSS=40V, I_D=3.5A
hDrain-Source ON Resistance
R_DS(ON)=45mʃ(Max.) @ V_GS=10V
R_DS(ON)=62mʃ(Max.) @ V_GS=4.5V
hSuper High Dense Cell Design
KMB3D5N40SA
N-Ch Trench MOSFET
E
L BL
DIM MILLIMETERS
A
2.93+_ 0.20
B 1.30+0.20/-0.15
2
3
C
1.30 MAX
D 0.40+0.15/-0.05
E 2.40+0.30/-0.20
1
G
1.90
H
0.95
J 0.13+0.10/-0.05
K
0.00 ~ 0.10
Q
P
P
L
0.55
M
0.20 MIN
N 1.00+0.20/-0.10
P
7
Q
0.1 MAX
M
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL N-Ch UNIT
Drain-Source Voltage
V_DSS
Gate-Source Voltage
V_GSS
Drain Current
DC@Ta=25
I_D
DC@Ta=70
Pulsed
I_DP
Drain-Source-Diode Forward Current
I_S
Ta=25
Drain Power Dissipation
P_D
Ta=70
Maximum Junction Temperature
T_j
Storage Temperature Range
T_stg
Thermal Resistance, Junction to Ambient
R_thJA
Note > *Surface Mounted on 1 ƒ1 FR4 Board, t † 5sec
40
V
‚20
V
3.5
2.8
A
14
1.0
A
1.25
W
0.8
150

-55q150 
100 /W
PIN CONNECTION (TOP VIEW)
D
3
3
2
G
2008. 2. 19
1
2
1
S
Revision No : 0
SOT-23
KN1
1/5