KMB3D5N40SA Datasheet, PDF (1/5 Pages) KEC(Korea Electronics) – N-Ch Trench MOSFET

SEMICONDUCTOR
TECHNICAL DATA
General Description
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for Load switch and Back-Light
Inverter.
FEATURES
V_DSS=40V, I_D=3.5A
Drain-Source ON Resistance
R_DS(ON)=45m (Max.) @ V_GS=10V
R_DS(ON)=62m (Max.) @ V_GS=4.5V
Super Hige Dense Cell Design
KMB3D5N40SA
N-Ch Trench MOSFET
E
L BL
2
3
1
P
P
M
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
2.93+_ 0.20
1.30+0.20/-0.15
1.30 MAX
0.40+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL N-Ch UNIT
Drain-Source Voltage
Gate-Source Voltage
DC@Ta=25
Drain Current
DC@Ta=70
Pulsed
Drain-Source-Diode Forward Current
Drain Power Dissipation
Ta=25
Ta=70
Maximum Junction Temperature
Storage Temperature Range
Thermal Resistance, Junction to Ambient
Note > *Surface Mounted on 1 1 FR4 Board, t
V_DSS
V_GSS
I_D
I_DP
I_S
P_D
T_j
T_stg
R_thJA
5sec
40
V
20
V
3.5
2.8
A
14
1.0
A
1.25
W
0.8
150
-55 150
100
/W
PIN CONNECTION (TOP VIEW)
D
3
3
2
G
2008. 2. 19
1
2
1
S
Revision No : 0
SOT-23
KN1
1/5